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HiPerFET TM
ISOPLUS 220 TM MOSFET
Q-Class
IXFC 15N80Q
V DSS
I D25
R DS(on)
= 800 V
= 13 A
= 0.65 ?
Electrically Isolated Back Surface
t rr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q g
ISOPLUS220 TM
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
800
800
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
13
V
V
A
G
D
S
Isolated back surface*
I DM
I AR
E AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
60
15
30
A
A
mJ
G = Gate
S = Source
Features
D = Drain
F C
E AS T C = 25 ° C
dv/dt I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
P D T C = 25 ° C
T J
T JM
T stg
T L 1.6 mm (0.062 in.) from case for 10 s
V ISOL 50/60 Hz, RMS t = 1 min leads to tab
mounting force with clip
Weight
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
1.0 J
10 V/ns
230 W
-40 ... +150 ° C
150 ° C
-40 ... +150 ° C
300 ° C
2500 V
11...65 / 2.5...15 N /lb
2 g
Characteristic Values
Min. Typ. Max.
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V DSS
V GS = 0 V, I D = 3 mA
800
V
Advantages
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
2.0
4.5
± 100
25
1
0.65
V
nA
μ A
mA
?
Easy assembly: no screws or isolation
foils required
Space savings
High power density
See IXFH15N80Q data sheet for
characteristic curves
? 2003 IXYS All rights reserved
DS98946B(07/03)
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